JPS6359538B2 - - Google Patents
Info
- Publication number
- JPS6359538B2 JPS6359538B2 JP14238381A JP14238381A JPS6359538B2 JP S6359538 B2 JPS6359538 B2 JP S6359538B2 JP 14238381 A JP14238381 A JP 14238381A JP 14238381 A JP14238381 A JP 14238381A JP S6359538 B2 JPS6359538 B2 JP S6359538B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- groove
- polysilicon
- semiconductor device
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 241000293849 Cordylanthus Species 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14238381A JPS5844735A (ja) | 1981-09-11 | 1981-09-11 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14238381A JPS5844735A (ja) | 1981-09-11 | 1981-09-11 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5844735A JPS5844735A (ja) | 1983-03-15 |
| JPS6359538B2 true JPS6359538B2 (en]) | 1988-11-21 |
Family
ID=15314082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14238381A Granted JPS5844735A (ja) | 1981-09-11 | 1981-09-11 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5844735A (en]) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59119848A (ja) * | 1982-12-27 | 1984-07-11 | Fujitsu Ltd | 半導体装置の製造方法 |
| GB2200794A (en) * | 1986-11-19 | 1988-08-10 | Plessey Co Plc | Semiconductor device manufacture |
| KR100256813B1 (ko) * | 1993-12-28 | 2000-05-15 | 김영환 | 반도체소자의 소자분리방법 |
| JP2891205B2 (ja) * | 1996-10-21 | 1999-05-17 | 日本電気株式会社 | 半導体集積回路の製造方法 |
| US7754550B2 (en) * | 2003-07-10 | 2010-07-13 | International Rectifier Corporation | Process for forming thick oxides on Si or SiC for semiconductor devices |
-
1981
- 1981-09-11 JP JP14238381A patent/JPS5844735A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5844735A (ja) | 1983-03-15 |
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